The next generation power semiconductor is here!

In the SUMMIT Series® UPS, the Silicon (Si) IGBT is replaced with advanced capability Silicon Carbide (SiC) semiconductors. The IEEE states that SiC is to the 21st century what Si was to the 20th century.

Mitsubishi Electric began development of SiC semiconductors during the early 1990s and now offers this provden technology in the SUMMIT Series® UPS. With SiC's lower switching losses, higher switching frequencies, and improved thermal conductivity range, higher efficiencies are achieved across all load levels (500 and 750 kVA) and can reach up to 98% efficiency.

Ranging from 1050 to 2100 kVA, the large-capacity, efficient, expandable 9900CX UPS is an ideal solution to improve uptime and provide a balanced power load. Our 1MW system has one of the smallest footprints on the market.

While the 9900D is a large UPS ranging from 1200-2000 kVA, it is significantly smaller than competitive models within its output range, and its efficiency allow you to do more with a single unit than competitors. This combined reduces gray space, cabling, and installation time, and freight costs.

The 9900D is responsive, shielding form power transients with advanced control and power module redundancy. An ideal UPS for data centres, it provides high-speed sampling and switching and is capable of operating in higher temperatures at higher altitudes.

With low heat rejection and full-frontal access for ease of maintenance, the 9900B UPS deliver all-around dependability. Its distributed bypass design allows for multimodule operations and high efficiencies in the 300-750 kVA range.