TOKYO, September 27, 2016 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will expand its lineup of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) to include units with 100W and 70W output power for use in satellite earth stations utilizing the Ku-band*. The new 100W GaN-HEMT offers output power that is among the highest currently available, according to Mitsubishi Electric's own research as of September 27. Mitsubishi Electric will begin shipping samples on October 1.
*Microwave band ranging from 12-18GHz
The demand for satellite communication is increasing, especially in Ku-band, which enables high-speed communication even under adverse conditions, such as natural disasters, and in areas where construction of communication facilities is difficult. The deployment of transmitter equipment using higher-power GaN-HEMTs has become more common in recent years, particularly in high-speed applications such as satellite news gathering.
Mitsubishi Electric is expanding its Ku-band GaN-HEMT lineup to meet this growing demand for higher output power levels with the introduction of its MGFK50G3745 model, boasting an industry-leading output power of 100W, and the 70W output power MGFK48G3745 model.
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Note that the releases are accurate at the time of publication but may be subject to change without notice.