TOKYO, August 31, 2016 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering world-leading* efficiency for 2.6GHz-band Base Transceiver Stations (BTS) of fourth-generation (4G) mobile communication systems. Samples will be released starting November 1.
*According to Mitsubishi Electric as of August 31, 2016
High-speed 4G mobile communication systems including Long Term Evolution (LTE) and LTE-Advanced incorporate are being equipped with progressively smaller BTS for macro-cells to increase data capacity and to reduce power consumption. Mitsubishi Electric's highly efficient new GaN-HEMT for 2.6GHz-band macro-cell BTS is expected to help realize even smaller and lower-power BTS.
Note that the releases are accurate at the time of publication but may be subject to change without notice.